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TYPICAL PERFORMANCE CURVES (R) APT50GT60BR_SR(G) 600V APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT(R) The Thunderblot IGBT(R) is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT(R) offers superior ruggedness and ultrafast switching speed. * Low Forward Voltage Drop * Low Tail Current * RBSOA and SCSOA Rated * High Freq. Switching to 100KHz * Ultra Low Leakage Current G C (B) TO -2 47 D3PAK C G E (S) E C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 All Ratings: TC = 25C unless otherwise specified. APT50GT60BR_SR(G) UNIT Volts 600 30 @ TC = 25C 110 52 150 150A @ 600V 446 -55 to 150 300 Watts C Amps Continuous Collector Current @ TC = 110C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units 600 3 1.7 4 2.0 2.2 25 2 5 2.5 Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C) 2 Volts I CES I GES A nA 11-2005 052-6273 Rev B Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V) TBD 120 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 APT50GT60BR_SR(G) Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 50A TJ = 150C, R G = 4.3, VGE = 15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V RG = 4.3 I C = 50A VGE = 15V MIN TYP MAX UNIT pF V nC 2500 250 155 7.5 240 20 110 150 14 32 240 36 995 1110 1070 14 32 270 95 1035 1655 1505 J ns ns A Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy 44 55 4 5 Turn-on Switching Energy (Diode) 6 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V RG = 4.3 I C = 50A J Turn-on Switching Energy (Diode) 6 TJ = +125C THERMAL AND MECHANICAL CHARACTERISTICS Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm .28 N/A 5.9 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 Continuous current limited by package lead temperature. APT Reserves the right to change, without notice, the specifications and information contained herein. 052-6273 Rev B 11-2005 TYPICAL PERFORMANCE CURVES 160 140 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 120 100 80 60 40 10 0 0 1 2 3 4 5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 250s PULSE TEST<0.5 % DUTY CYCLE V GE = 15V 200 180 160 140 120 100 80 60 40 20 0 APT50GT60BR_SR(G) 15V 13V 11V 10V TJ = 25C TJ = -55C TJ = 125C 9V 8V 7V 6V 160 140 120 100 FIGURE 1, Output Characteristics(TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V) 16 14 12 10 FIGURE 2, Output Characteristics (TJ = 125C) I = 50A C T = 25C J 0 5 10 15 20 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = -55C VCE = 120V VCE = 300V VCE = 480V 80 60 40 20 0 0 TJ = 25C TJ = 125C 8 6 4 2 0 0 50 2 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 100 150 200 GATE CHARGE (nC) 250 FIGURE 3, Transfer Characteristics FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 5 TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE 4 IC = 100A IC = 100A 3 IC = 50A IC = 50A 2 IC = 25A 1 IC = 25A 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.15 0 6 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 160 1.05 1.00 0.95 0.90 0.85 0.80 0.75 IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.10 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 Lead Temperature Limited 052-6273 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Threshold Voltage vs. Junction Temperature Rev B 11-2005 25 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 350 300 250 200 150 50 VCE = 400V RG = 4.3 APT50GT60BR_SR(G) 20 VGE = 15V 15 VGE =15V,TJ=125C VGE =15V,TJ=25C 10 5 VCE = 400V 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 90 80 70 tf, FALL TIME (ns) tr, RISE TIME (ns) 60 50 40 30 20 10 0 TJ = 25 or 125C,VGE = 15V RG = 4.3, L = 100H, VCE = 400V 0 TJ = 25C, or 125C RG = 4.3 L = 100H 0 20 40 60 80 100 125 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 180 160 140 120 100 80 60 40 20 0 TJ = 25C, VGE = 15V TJ = 125C, VGE = 15V 0 L = 100H 0 RG = 4.3, L = 100H, VCE = 400V 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 5000 EON2, TURN ON ENERGY LOSS (J) EOFF, TURN OFF ENERGY LOSS (J) V = 400V CE V = +15V GE R = 4.3 G 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 3500 3000 2500 2000 1500 1000 500 0 TJ = 25C = 400V V CE = +15V V GE R = 4.3 G 4000 TJ = 125C TJ = 125C 3000 2000 1000 TJ = 25C 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 10,000 SWITCHING ENERGY LOSSES (J) = 400V V CE = +15V V GE T = 125C J 0 0 20 40 60 80 100 120 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 5,000 SWITCHING ENERGY LOSSES (J) V = 400V CE V = +15V GE R = 4.3 G Eon2,100A Eon2,100A 8,000 4,000 Eoff,100A 6,000 3,000 4,000 Eoff,100A 11-2005 Eoff,50A Eon2,50A Eoff,25A 2,000 Eon2,50A Eoff,50A Eon2,25A Eoff,25A 2,000 1,000 Rev B 052-6273 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0 Eon2,25A 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0 0 TYPICAL PERFORMANCE CURVES 4,000 Cies IC, COLLECTOR CURRENT (A) 160 140 120 100 80 60 40 20 APT50GT60BR_SR(G) C, CAPACITANCE ( F) P 1,000 500 Coes Cres 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 100 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area 0 0.30 0.25 0.20 0.15 0.10 0.05 0 D = 0.9 ZJC, THERMAL IMPEDANCE (C/W) 0.7 0.5 Note: 0.3 SINGLE PULSE 0.1 0.05 10-5 10-4 PDM t1 t2 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 120 FMAX, OPERATING FREQUENCY (kHz) 50 RC MODEL Junction temp. (C) 0.114 Power (watts) 0.113 Case temperature. (C) 0.0276 0.0057 10 T = 125C J T = 75C C D = 50 % V = 400V CE R = 4.3 G = min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf max F fmax2 = Pdiss = Pdiss - Pcond Eon2 + Eoff TJ - TC RJC FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 30 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 2 10 20 052-6273 Rev B 11-2005 APT50GT60BR_SR(G) Gate Voltage APT40DQ60 10% td(on) tr TJ = 125C Collector Current V CC IC V CE 90% 5% 10% 5% Collector Voltage A D.U.T. Switching Energy Figure 21, Inductive Switching Test Circuit Figure 22, Turn-on Switching Waveforms and Definitions 90% Gate Voltage td(off) 90% Collector Voltage tf 10% TJ = 125C 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions TO-247 Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) D PAK Package Outline e3 SAC: Tin, Silver, Copper Collector (Heat Sink) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 1.04 (.041) 1.15(.045) 13.41 (.528) 13.51(.532) 3 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC Collector 20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150) Revised 4/18/95 13.79 (.543) 13.99(.551) Revised 8/29/97 11.51 (.453) 11.61 (.457) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 11-2005 19.81 (.780) 20.32 (.800) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 1.22 (.048) 1.32 (.052) 3.81 (.150) 4.06 (.160) (Base of Lead) Rev B Gate Collector Emitter Heat Sink (Collector) and Leads are Plated 2.21 (.087) 2.59 (.102) 052-6273 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Emitter Collector Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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